Oct 01, 2010

HoloDark for DigitalMicrograph


Higashimatsuyama, Saitama, Japan (Oct. 01, 2010): HREM Research Inc. introduced HoloDark at IMC17 in Rio, Brazil. HoloDark allows strain mapping analysis to high accuracy, down to 2x10-4, using dark-field electron holography.


HoloDark is a patented procedure developed by Martin Hytch at CEMES-CNRS, Toulouse, France. HoloDark measures geometric phase from a dark-field hologram. Using two geometric phases HoloDark calculates strain map in a similar way to GPA (Geometric Phase Analysis) for DigitalMicrograph. The user can obtain the same information but for much higher accuracy and wider fields of view. This is because each dark-field hologram is obtained at lower magnification compared with a HREM image required by GPA.


"Introducing strain in semiconductors has become an important technique, and measuring strain to high accuracy is therefore essential," says Dr. Kazuo Ishizuka, President of HREM Research Inc. "We have two strain measurement plug-ins (GPA, PPA) based on HREM images. HoloDark requires an electron biprism and is a more experimentally demanding technique, but this is a choice when a high-accuracy wide-area strain measurement is essential."


About HREM Research Inc.

Founded in 2001, HREM Research Inc. specializes in developing products and services that enhance High-Resolution Electron Microscopy (HREM). Dr. Kazuo Ishizuka, the founder of a company has established the whole technique for HREM image simulation. Thus, the company's flagship product, Mac/WinHREM, is world leading HREM image simulation software. Currently, HREM Research Inc. is actively working on making useful techniques available to the HREM community. For more information, visit or contact



Kazuo Ishizuka

HREM Research Inc.

14-48 Matsukazedai, Higashimatsuyama

355-0055 JAPAN


Supplementary materials

Distribution of strain across three p-MOSFET transistors measured by dark-field electron holography (HoloDark). The Si1-xGex source and drain regions apply compressive strain (in blue) to the silicon channel. Courtesy of M.J. Hytch, F. Houdellier, F. Hue, and E. Snoeck, Nature 453 (2008) 1086-1089. Nanoscale holographic interferometry for strain measurements in electronic devices.